Temperature and pressure transducer

ABSTRACT

Methods for making and systems employing pressure and temperature sensors are described. Embodiments include a capacitive element including a first conductor plate and a second conductor plate. Each plate includes a conductor layer formed on a substrate. In a pressure sensor embodiment, seal is positioned at or near the edges of the conductor plates, and a gas retained in a gap defined between the plates. In a temperature sensor embodiment, the gap defined between the plates is in fluid communication with the external environment.

CROSS REFERENCE TO RELATED APPLICATIONS

This application claims the benefit of priority to U.S. provisionalapplication Ser. No. 60/899,629, filed Feb. 6, 2007, the entire contentsof which is incorporated herein in its entirety by reference.

FIELD

The present invention relates generally to temperature and pressuretransducers and more particularly to transducers that shift a frequencyof a reflected signal based on a response to temperature or pressure.

BACKGROUND

In operations, piping can extend hundreds or thousands of feet belowground to a well through a harsh downhole environment. Devices have beenused for monitoring downhole conditions of a drilled well so that anefficient operation can be maintained. These downhole conditions includetemperature and pressure, among others. A pressure sensor implemented inthis environment should be configured operate within the potentiallydifficult environmental conditions. Likewise, a temperature sensorimplemented in this environment should have a response that isrelatively insensitive to changes in pressure.

SUMMARY

A device in accordance with an embodiment includes a pressure sensorhaving a first conductor plate that includes a first layer formed on afirst substrate. The first layer has a high coefficient of thermalexpansion relative to the first substrate. The pressure sensor also hasa second conductor plate that includes a second layer formed on a secondsubstrate. The second layer has a high coefficient of thermal expansionrelative to the second substrate. A hermetic seal is located at theedges of the first and second conductor plates. The first and secondconductor plates are fixed relative to one another, and a gas isretained in an adjustable gap between the first and second conductorplates.

A device in accordance with an embodiment includes a temperature sensorhaving a first conductor plate that includes a first layer formed on afirst substrate. The first layer has a first coefficient of thermalexpansion relative to the first substrate. The temperature also includesa second conductor plate having a second layer formed on a secondsubstrate. The second layer has a second coefficient of thermalexpansion relative to the second substrate. An adjustable gap is locatedbetween the first conductor plate and the second conductor plate, and avent is formed in at least one of the first conductor plate and thesecond conductor plate.

A system in accordance with another embodiment includes a an enclosurehaving a signal generator for generating an electromagnetic energysignal, an oscillating component for generating a ringing signal basedon the electromagnetic energy, a component for adjusting a frequency ofa ringing signal in response to a change in pressure applied thereto,and a processor for correlating the adjusted frequency to a pressure atthe enclosure.

A system in accordance with another embodiment of the invention includesan enclosure having a signal generator for generating an electromagneticenergy of signal, an oscillating component for generating a ringingsignal based on the electromagnetic energy, an element for adjusting afrequency of an electromagnetic signal based on a temperature in theenclosure, and a processor for correlating the adjusted frequency to theobserved temperature of the enclosure.

A method in accordance with an embodiment of the invention includesusing a system having a capacitor with a first plate and a second plate,retaining a gas in a gap between the first and second plates, generatinga signal having a predetermined frequency, shifting the frequency of thegenerated signal based on a warping of at least one of the first plateand the second plate due to a pressure of the gas retained between thefirst and second plates, and correlating the shift in frequency to apressure value.

A method in accordance with an embodiment of the invention includesusing a system having a capacitor with a first plate having a firstcoefficient of thermal expansion and a second plate having a secondcoefficient of thermal expansion and a vent provided in at least one ofthe first and second plates. The method includes generating a signalhaving a characteristic frequency, shifting the characteristic frequencyof the signal based on a bending of at least one of the first plate andthe second plate due to temperature, wherein the bending adjusts a gapbetween the first plate and the second plate, and correlating the shiftin frequency to a temperature value.

A method in accordance with another embodiment includes bonding a firstlayer having a high expansion coefficient to a second layer having a lowexpansion coefficient to form a first plate, forming a first dielectriclayer on the first layer of the first plate, bonding a third layerhaving a high expansion coefficient to a fourth layer having a lowexpansion coefficient to form a second plate, forming a seconddielectric layer on the third layer of the second plate, mounting thefirst plate and the second plate such that the first and seconddielectric layers are adjacent, and sealing edges of the mounted platesso that a gas is retained between the first and second plates.

A method in accordance with another embodiment includes bonding a firstlayer having a high expansion coefficient to a second layer having a lowexpansion coefficient to form a first plate, forming a first dielectriclayer on the first layer of the first plate, bonding a third layerhaving a high expansion coefficient to a fourth layer having a lowexpansion coefficient to form a second plate, forming a seconddielectric layer on the third layer of the second plate, forming a ventin at least one of the first plate and the second plate, mounting thefirst plate and the second plate such that the first and seconddielectric layers are adjacent and a gap is established between theplates, and bonding edges of the first plate and second plate together.

In accordance with another embodiment of the invention, amachine-readable medium includes machine-executable instructions forperforming the methods or operating the systems described herein.

DESCRIPTION OF THE DRAWINGS

Embodiments will be described in greater detail in reference to thedrawings, wherein:

FIG. 1 illustrates a pressure sensor in accordance with an embodiment;

FIG. 2 illustrates a temperature sensor in accordance with anembodiment;

FIG. 3 illustrates a second temperature sensor in accordance with anembodiment;

FIGS. 4A-4E illustrates a method of manufacturing a pressure sensor inaccordance with an embodiment;

FIGS. 5A-5E illustrates a method of manufacturing a temperature sensorin accordance with an embodiment;

FIG. 6 illustrates an overview of a system for measuring pressure in anenclosure in accordance with an embodiment;

FIG. 7 is an overview of a telemetry system for measuring temperaturesin an enclosure in accordance with an embodiment; and

FIG. 8 is a flowchart of a method of measuring temperature or pressurein accordance with an embodiment.

DETAILED DESCRIPTION

FIG. 1 illustrates a pressure sensor 100 in accordance with anembodiment. The pressure sensor 100 includes a first conductor plate 102and a second conductor plate 104.

The first conductor plate 102 includes a substrate 106 and a metal layer108 formed on the substrate 106. The metal layer 108 is formed from ametal that has a coefficient of thermal expansion (CTE2) that is greaterthan the coefficient of thermal expansion (CTE1) of the substrate 106. Adielectric layer 110 is formed on the metal layer 108.

The second conductor plate 104 includes a substrate 112 and a metallayer 114 formed on the substrate 112. The metal layer 114 is formedfrom a metal that has a coefficient of thermal expansion (CTE4) that isgreater than the coefficient of thermal expansion (CTE3) of thesubstrate 112. A dielectric layer 116 is formed on the metal layer 114.

The first conductor plate 102 is mounted on the second conductor plate104 such that the dielectric layer 110 of the first conductor plate 102is adjacent to the dielectric layer 116 of the second conductor plate104. A hermetic seal 118 is formed at the edges of the first conductorplate 102 and the second conductor plate 104 such that the first andsecond conductor plates 102 and 104 are fixed relative to one another.The first conductor plate 102 and the second conductor plate 104 arefixed relative to one another such that a gap (G) between approximatelyone to twenty thousandths of an inch (0.001″-0.020″) is establishedbetween the plates. A gas is retained in the gap between the conductorplates 102 and 104. Conductive (e.g., metallic) leads 120 and 122 areconnected to the first conductor plate 102 and the second conductorplate 104, respectively. The leads 120 and 122 enable the pressuresensor 100 to connect to external circuitry.

The first metal layer 108 of the first conductor plate 102 has acoefficient of thermal expansion (CTE2) that is greater for thecoefficient of thermal expansion (CTE4) of the second metal layer 114 ofthe second conductor plate 104. Moreover, to respond to pressure changesof the surrounding environment, the gas retained between the conductorplates 102 and 104 can be an inert gas such as nitrogen or argon. Itshould be readily apparent that any gas may be retained in the gap basedon the desired response. The gas can be selected based, for example, onits propensity to provide a reproducible and predictable response topressure changes of the surrounding environment.

The substrates 106 and 112 of the first conductor plate 102 and thesecond conductor plate 104, respectively, may be formed of an insulatingmaterial having a coefficient of thermal expansion that is substantiallyequal to zero (0). The insulating material of which the substrates 106and 112 is formed should be resilient and capable of insulating andproviding structural integrity to the pressure sensor 100 for use inharsh environments. A suitable material for forming as substrates 106and 112 is carbon fiber fabric, however, it should be readily apparentthat the choice of materials is not limited to this selection.

The metal layers 108 and 114 of the conductor plates 102 and 104,respectively, are formed from a material having a high coefficient ofthermal expansion relative to the material of the respective substrates106 and 112. Materials known to provide good performance in use as themetal layers 108 and 114 include copper and stainless steel, forexample, however, the metal layers 108 and 114 are not limited solely tothese materials and may be formed of any metal having a coefficient ofthermal expansion that provides the desired response. For lowcoefficient of thermal expansion materials, metals such as iron-nickelalloys may be suitable. For example 36FeNi (sold under the trade nameInvar) or FeNi42 may be suited to low coefficient of thermal expansionapplications. Likewise a ceramic material such as Zerodur may be usefulin this regard. Where it is necessary to have an insulative property,the metallic alloys may be coated or covered in an insulating material.

During operation, the pressure sensor 100 responds to external pressureby adjusting the size of the gap between the conductive plate 102 and104 based on the bending (e.g., degree of warpage) of at least one ofthe respective conductor plates. The gas retained in the gap acts as aspring to move the conductive plates 102 and 104 further apart at lowerexternal pressures and compresses the conductive plates 102 and 104closer together at higher external pressures. When the metal layers 108and 114 are formed of a metal such as copper, for example, that has ahigh coefficient of thermal expansion, the metal layers 108 and 114 alsoexperience bending (e.g., warpage) due to changes in temperature. Thisbending can be a exhibited by an inward or outward bowing of therespective metal based on temperature. The substrates 106 and 112, whenformed from carbon fiber material, for example, have a lower coefficientof thermal expansion and are thus more stable with respect to changes intemperature than the copper of metal layers 108 and 114. In this case,the substrates 106 and 112 can counteract the temperature relatedwarpage of the metal layers 108 and 114, respectively, and reduce theeffects of external temperature changes on pressure monitoring. As willbe appreciated, the same effect may be achieved by providing both asubstrate and a conductor layer having low coefficient of thermalexpansion. By selection of relative thicknesses of each layer inaddition to proper material selection, the device can be made to berelatively more sensitive to pressure than to temperature.

FIG. 2 illustrates a temperature sensor 200 of an embodiment. Thetemperature sensor 200 includes a first conductor plate 202 and a secondconductor plate 204.

The first conductor plate 202 includes a substrate 206 and a metal layer208 formed on the substrate 206. The metal layer 208 has a substantiallyhigher coefficient of thermal expansion (CTE2) than the coefficient ofthermal expansion of the substrate 206 (CTE1). A dielectric layer 210 isformed on the metal layer 208.

The second conductor layer 204 includes a substrate 212 and a metallayer 214 formed on the substrate 212. The metal layer 214 has asubstantially higher coefficient of thermal expansion (CTE4) than thecoefficient of thermal expansion of the substrate 212 (CTE3). Adielectric layer 216 is formed on the metal layer 214.

A vent 218 is formed through the first conductor plate 202 such that thevent 218 extends from an outer surface of the substrate 206, through themetal layer 208, to an outer surface of the dielectric layer 210. Thevent 218 provides an escape path for any gas that is retained betweenthe conductor plates 202 and 204. By providing an escape path for thegas, the vent 218 ensures that external pressure has relatively littleinfluence on the temperature response of the sensor 200.

The first conductor plate 202 and the second conductor plate 204 aremounted such that the dielectric layers 210 and 216 are adjacent.Furthermore, the conductor plates 202 and 204 are mounted such that agap (G) between one and twenty thousandths of an inch (0.001″ to 0.020″or lesser or greater as desired) is established therebetween. Metalleads 220 and 222 are attached to the first conductor plate 202 and thesecond conductor plate 204, respectively. These metal leads enable thetemperature sensor 200 to be connected to external circuitry.

The substrates 206 and 212, the metal layers 208 and 214, and thedielectric layers 210 and 216 may be formed from the same materials asdescribed above with respect to the corresponding components of thepressure sensor 100.

During operation, as the temperature of the surrounding environmentincreases, the metal layers 208 and 214 bend (e.g., warp) inwardly toreduce the size of the gap (G). The degree of warpage of metal layers208 and 214 can be directly related to the coefficient of thermalexpansion associated with each respective layer. Additionally, thecoefficient of thermal expansion and the thickness of the substrates 206and 212 can also determine the degree of warpage of the metal layers 208and 214.

FIG. 3 illustrates a temperature sensor 300 of an embodiment.Temperature sensor 300 includes a conductor plate 302 having a substrate306, a metal layer 310, and a dielectric layer 314. The temperaturesensor 300 also includes a conductor plate 304 having a substrate 308, ametal layer 312, and a dielectric layer 316. The conductor plates 302and 304 are implemented through the same materials and employ the samecharacteristics as described above with respect to the temperaturesensor 200 of FIG. 2. In addition to these components, the temperaturesensor 300 also includes a vent 318 in the conductor plate 302 and avent 320 in the conductor plate 304. The vent 318 extends from an outersurface of substrate 306 to an outer surface of dielectric layer 314.The vent 320 extends from an outer surface of substrate 308 to an outersurface of the dielectric layer 316.

During operation, the temperature sensor 300 responds to externaltemperatures in the manner as described above with respect totemperature sensor 200 of FIG. 2. The use of the additional vent 320 canfurther reduce or eliminate effects of external pressure by enabling anadditional path of escape for any gas retained between the conductorplates 302 and 304.

FIGS. 4A through 4E illustrate a process of manufacturing a pressuresensor of an embodiment. In FIG. 4A, the metal layer 108 is formed onthe substrate 106. The metal layer 108 may be bonded to the substrate106 through any known processes, including lamination through an epoxyresin and explosive bonding, for example. In FIG. 4B, the dielectriclayer 110 is formed on the metal layer 108. Both conductive plates ofthe pressure sensor are formed in the previously described manner. FIG.4C illustrates the conductive plate 104 having the metal layer 114 anddielectric layer 116 formed sequentially on the substrate 112. Those ofordinary skill in the art will appreciate that conductive plates 102 and104 may be formed through the same or a similar process.

In FIG. 4D, the first conductive plate 102 is mounted on the secondconductive plate 104 such that a gap (G) between approximately one andtwenty thousandths of an inch (0.001″ to 0.020″, or less or greater asdesired) is established between the dielectric layers of each plate. InFIG. 4E, the two plates are hermetically sealed together at their edgesto create a pressure vessel. At the time the two plates are hermeticallysealed, air or a gas can be deliberately trapped in the gap (G) betweenthe plates. Alternatively, the air or gas can be injected into thecavity between the plates.

FIGS. 5A through 5E illustrate a process of manufacturing a temperaturesensor of an embodiment. In FIG. 5A, a metal layer 208 is bonded to thesubstrate 206. The metal layer 208 may be bonded to the substrate 206through processes including but not limited to, for example, laminationusing an epoxy resin, and an explosive bonding process. In FIG. 5B, adielectric layer 210 is applied and formed on the metal layer 208.

In FIG. 5C, a second conductor plate 204 may be formed in a mannersimilar to that previously discussed with respect to the first conductorplate 202. For this reason, the process of forming the second conductorplate 204 will not be discussed in greater detail.

In FIG. 5D, a vent 218 is formed in the first conductor plate 202. Thevent 218 is formed by drilling a small hole from the outer surface ofthe substrate 206 through the metal layer 208, to an outer surface ofthe dielectric layer 210. It should be readily apparent that this sameprocess may be used to form a vent 218 in the second conductor plate204.

In FIG. 5E, the first conductor plate is mounted onto the secondconductor plate such that a gap (G) between approximately one and twentythousandths of an inch (0.001″ to 0.020″, or lesser or greater asdesired) is established between the two plates. The edges of the twoplates are fixedly attached to one another but not sealed so that anyinfluence of pressure is canceled.

The materials used to construct the pressure and temperature sensorsshould be properly balanced to achieve a desired response to changes inthe pressure and temperature of the environment. For example, thethickness of the substrate determines the effectiveness of the substratein canceling the warping effect of an associated metal layer. Layers maybe formed of varying thicknesses and/or have a multilayered structure.Additionally, the substrates of the pressure or temperature sensor maybe constructed such that one or both of the conductive plates warp inresponse to the external temperature or pressure. In an embodiment, thewarping or active conductive plate is formed on a substrate having athickness that enables the plate to effectively warp or bow based on theexternal pressure or temperature to achieve the desired response. Forexample, the substrate of the active plate may be formed from a single0.011″ thick carbon fiber fabric. The non-warping or inactive plate ismultilayered or otherwise formed at a thickness that restricts theability of the inactive plate to bow. For example, the substrate of thenon-active plate may be formed from a single or multi-layer carbon fiberfabric having a total thickness of 0.033″.

FIG. 6 illustrates an embodiment of a system 600 for measuring pressurein an enclosure (E).

The enclosure (E) may be implemented in numerous shapes and sizes andmay be a partial or full enclosure. The enclosure (E), as illustrated,is a representation of a full enclosure that is a high temperatureand/or high pressure vessel. By way of example, the temperature withinthe enclosure may reach up to 600° F.

The high temperatures and pressures realized in the enclosure (E) may begenerated by any of numerous industrial applications such as drilling,manufacturing, or construction operations, for example. Those ofordinary skill in the art will appreciate that high temperatures andpressures of the enclosure (E) may also be generated through the innateenvironmental conditions experienced by the enclosure (E) itself.

The system 600 includes a device, such as a signal generator 602, forgenerating an electromagnetic signal or an electromagnetic pulse (EMP).The frequency of the signal can be in a range that includes, but is notlimited to, RF frequencies such as 3 Hz-30 GHz, or lesser or greater asdesired. The signal is communicated to the enclosure (E) through asuitable medium such as cabling, conductive piping, or over-air, forexample.

The system 600 also includes a device, such as the capacitive sensor100, for adjusting the frequency of the signal based on the pressure ofthe enclosure. The capacitive sensor 100 can be included in a resonantcircuit 604.

The resonant circuit 604 includes means such as an antenna 606 forreceiving the RF signal. The resonant circuit 604 also includes means,such as an inductor 608, for connecting the resonant circuit 604 to theantenna 606. The resonant circuit 604 also includes a circuit resistance610 and circuit inductance 612 which represent the impedance of circuitcasing. The resonant circuit 604 receives the RF signal through theantenna 606, and rings at its natural frequency. The capacitive sensor100 senses the pressure of the enclosure, and modulates the frequencyinduced in the resonant circuit 604. The capacitive sensor 100 modulatesthe frequency by bending (e.g., warping) at least one of the first plateand the second plate relative to the pressure exerted on the gas that isretained in the gap (G) between the plates, by the enclosure (E). Themodulated frequency can be processed to provide a measure of thepressure of the enclosure. That is, the vibration frequency induced bythe RF energy is modulated by the sensed pressure of the enclosure, andthis modulation of the frequency can be processed to provide a measureof the characteristic.

The system 600 also includes a device, such as a correlator 614, forcorrelating the modulated frequency to the observed pressure of theenclosure. Those skilled in the art will appreciate that the correlator614 may be a processor or computer device. The correlator 614 can beprogrammed to process the modulated vibration frequency to provide ameasurement of the sensed characteristic. The measurement can, forexample, be displayed to a user via a graphical user interface (GUI).The correlator 614 can perform any desired processing of the detectedsignal including, but not limited to, a statistical (e.g., Fourier)analysis of the modulated vibration frequency. Commercial products arereadily available and known to those skilled in the art for performingsuitable frequency analysis. For example, a fast Fourier transform thatcan be implemented by, for example, MATHCAD available from MathsoftEngineering & Education, Inc., or other suitable product to deconvolvethe modulated ring received from the resonant network device. Theprocessor can be used in conjunction with a look-up table having acorrelation table of modulation frequency-to sensed characteristics(e.g., temperature, pressure, and so forth) conversions.

FIG. 7 illustrates an embodiment of a system 700 for measuringtemperature in an enclosure (E).

The system 700 includes a signal generator 702, a capacitive sensor 200and, a correlator 714. It should be readily apparent that the signalgenerator 702, and the correlator 714 are similar to the correspondingelements, as illustrated in the embodiment of FIG. 6.

The capacitive sensor 200 adjusts the frequency of the RF signalresonant circuit based on the temperature of the enclosure. Thecapacitive sensor 200 can be included in a resonant circuit 704. It willbe appreciated that the resonant circuit 704 may be similar to thecorresponding element as illustrated in the embodiment of FIG. 6 andlikewise includes an antenna 706, inductor 708, circuit resistance 710,circuit inductance 712. The capacitive sensor 200 adjusts the frequencyof the resonant circuit 704 by bending (e.g., warping) at least one ofthe first plate and the second plate relative to the temperature of theenclosure (E).

FIG. 8 is a flowchart that illustrates an embodiment of a method ofmeasuring temperature on pressure in an enclosure. To measure pressure,the method is implemented using the system 600 having a pressure sensor100 as discussed above. To measure temperature, the method isimplemented using the system 700 having a temperature sensor 200 asdiscussed above.

As shown in FIG. 8 at 800, a signal generator generates anelectromagnetic signal or an electromagnetic pulse (EMP) at a frequencybetween, for example, 3 Hz and 30 GHz. The resonant circuit 604, 704receives the signal (802). The capacitive sensor 100, 200 of theresonant circuit 604, 704 adjusts the frequency of the received signalby bending (e.g., warping) at least one of the first plate and thesecond plate in response to pressure or temperature depending on theapplication (804). The bending of the plates adjusts the spacing of thegap between the plates, thereby changing the capacitance of thecapacitive sensor 100, 200.

The receiver 602, 702 receives the signal (806) and the correlator 608,708 uses a look-up table to correlate the modulation of the frequency toan observed pressure or temperature value (808).

While the invention has been described with reference to specificembodiments, this description is merely representative of the inventionand is not to be construed as limiting the invention. Variousmodifications and applications may occur to those skilled in the artwithout departing from the true spirit and scope of the invention asdefined by the appended claims.

What is claimed is:
 1. A system for sensing a characteristic in asubterranean environment, comprising: a signal generator, configured andarranged to generate an electromagnetic signal; a sensor probe,locatable in a region of the subterranean environment, the sensor probeincluding a resonant circuit portion that includes a capacitive element,the resonant circuit portion being configured and arranged to receiveenergy from the electromagnetic signal and to generate a ringing signalin response to the electromagnetic signal, wherein the capacitiveelement of the sensor probe is responsive to a condition of thecharacteristic in the region of the subterranean environment to modulatethe ringing signal in accordance therewith; the capacitive elementcomprising: a first conductor plate having a first conductive layersupported by a first substrate; and a second conductor plate having asecond conductive layer supported by a second substrate, the first andsecond conductor plates together defining an adjustable gaptherebetween, the adjustable gap being adjustable responsive to thecondition to alter a capacitance of the capacitive element, wherein theadjustable gap is adjustable responsive to a temperature condition toalter the capacitance of the capacitive element; wherein the firstconductive layer has a higher coefficient of thermal expansion than doesthe first substrate, the second conductive layer has a highercoefficient of thermal expansion than does the second substrate, and avolume between the first and second conductor plates comprising theadjustable gap being in fluid communication with the subterraneanenvironment via a vent formed in at least one of the first conductorplate and the second conductor plate, wherein a member extending betweenthe first and second conductor plates defines the volume, and whereinthe member comprises a compressible member constructed and arranged toresiliently compress in response to flexing of the conductor plates; areceiver, configured and arranged to receive the modulated ringingsignal; and a processor, configured and arranged to process themodulated ringing signal to obtain a measurement of the condition.
 2. Asystem in accordance with claim 1, wherein the characteristic is apressure condition and further comprising: a seal between the first andsecond conductor plates, the seal constructed and arranged to retain acompressible material in an adjustable gap between the first and secondconductor plates and wherein, the adjustable gap is adjustableresponsive to the pressure condition to alter the capacitance of thecapacitive element and wherein the first and second conductor plates arearranged and comprise materials selected such that a change in theadjustable gap due to a change in temperature is less than a change inthe adjustable gap due to a change in pressure.
 3. A system inaccordance with claim 2, wherein a coefficient of thermal expansion ofone or both of the first and second conductive layers is less than about10·10⁻⁶ 1/K.
 4. A system in accordance with claim 3, wherein acoefficient of thermal expansion of one or both of the first and secondsubstrates is less than about 5·10⁻⁶ 1/K.
 5. A system in accordance withclaim 4, wherein one or both of the first and second conductor platescomprises at least one of carbon fiber, 36FeNi or FeNi42.
 6. A system inaccordance with claim 2, wherein a flexural response to pressure of thefirst conductive plate is greater than a flexural response to pressureof the second conductive plate.
 7. A system in accordance with claim 2,wherein one or both of the first and second conductive layers comprisesa plurality of layers, each layer comprising a material having a lowcoefficient of thermal expansion.
 8. A system in accordance with claim7, wherein each layer comprises a material having a coefficient ofthermal expansion less than about 10·10⁻⁶ 1/K.
 9. A system in accordancewith claim 8, wherein each layer comprises a material having acoefficient of thermal expansion less than about 5·10⁻⁶ 1/K.
 10. Asystem in accordance with claim 2, wherein the compressible materialcomprises an inert gas.
 11. A system in accordance with claim 1, whereinat least a portion of a periphery of the volume is open to allow thevolume to be in fluid communication with the subterranean environment.12. A system in accordance with claim 1, wherein the first conductivelayer has a higher coefficient of thermal expansion than does the secondconductive layer.
 13. A system in accordance with claim 12, wherein thefirst substrate has a higher coefficient of thermal expansion than doesthe second substrate.
 14. A system in accordance with claim 1, whereinone or both of the first conductive layer and the second conductivelayer comprises a metal having a coefficient of thermal expansiongreater than about 10·10⁻⁶ 1/K.
 15. A system in accordance with claim14, wherein the metal comprises a metal selected from the groupconsisting of steel, copper, brass, and aluminum.
 16. A system inaccordance with claim 1, wherein one of the first and second conductorplates is inactive and the other is active.
 17. A system in accordancewith claim 16, wherein the inactive plate comprises at least one ofcarbon fiber, 36FeNi or FeNi42.
 18. A capacitive sensor comprising: afirst conductor plate having a first conductive layer supported by afirst substrate, the first conductive layer having a higher coefficientof thermal expansion than does the first substrate; a second conductorplate having a second conductive layer supported by a second substrate,the second conductive layer having a higher coefficient of thermalexpansion than does the second substrate, and the first and secondconductor plates together defining an adjustable gap therebetween,wherein the adjustable gap is adjustable responsive to a temperaturecondition to alter an capacitance of the capacitive element; a volumebetween the first and second conductor plates comprising the adjustablegap being in fluid communication with the subterranean environment; anda member extending between the first and second conductor plates todefine the volume and wherein the volume is in fluid communication withthe subterranean environment via a vent formed in at least one of thefirst conductor plate and the second conductor plate, wherein the membercomprises a compressible member constructed and arranged to resilientlycompress in response to flexing of the conductor plates.
 19. A sensor inaccordance with claim 18, wherein at least a portion of a periphery ofthe volume is open to allow the volume to be in fluid communication withthe subterranean environment.
 20. A sensor in accordance with claim 18,wherein the first conductive layer has a higher coefficient of thermalexpansion than does the second conductive layer.
 21. A method ofmeasuring a characteristic in a subterranean environment, comprising:generating an electromagnetic signal; receiving energy from theelectromagnetic signal and generating a ringing signal in response tothe electromagnetic signal, using a capacitive element that isresponsive to a condition of the characteristic in the region of thesubterranean environment to modulate the ringing signal in accordancetherewith; the capacitive element comprising: a first conductor platehaving a first conductive layer supported by a first substrate; and asecond conductor plate having a second conductive layer supported by asecond substrate, the first and second conductor plates togetherdefining an adjustable gap therebetween, the adjustable gap beingadjustable responsive to the condition to alter a capacitance of thecapacitive element, a volume between the first and second conductorplates comprising the adjustable gap being in fluid communication withthe subterranean environment via a vent formed in at least one of thefirst conductor plate and the second conductor plate, wherein a memberextending between the first and second conductor plates defines thevolume, and wherein the member comprises a compressible memberconstructed and arranged to resiliently compress in response to flexingof the conductor plates; receiving the modulated ringing signal; andcorrelating the modulation with a measurement of the condition.
 22. Amethod in accordance with claim 21, wherein the capacitive sensorfurther comprises a seal between the first and second conductor plates,the seal constructed and arranged to retain a compressible material inan adjustable gap between the first and second conductor plates andwherein the adjustable gap is adjustable responsive to a pressurecondition to alter the capacitance of the capacitive element and whereinthe first and second conductor plates are arranged and comprisematerials selected such that a change in the adjustable gap due to achange in temperature is less than a change in the adjustable gap due toa change in pressure.
 23. A method in accordance with claim 21, whereinthe condition comprises a temperature, and a volume between the firstand second conductor plates comprising the adjustable gap is in fluidcommunication with the subterranean environment such that a change inthe adjustable gap due to a change in pressure is less than a change inthe adjustable gap due to a change in temperature.